BUX13 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Bipolar NPN Device in a Metal Package

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX13
DESCRIPTION
·Low Collector Saturation Voltage
·High Switching Speed
·High Current Current Capability
APPLICATIONS
·Power switching circuits
·Motor control
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
VCEX
VCER
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
400
V
400
V
390
V
325
V
7
V
15
A
20
A
3
A
150
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.17 ℃/W
isc website：www.iscsemi.cn
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