BUX12P Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX12P
DESCRIPTION
·Low Collector Saturation Voltage
·High Switching Speed
·High Current Current Capability
APPLICATIONS
·Power switching circuits
·Motor control
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
VCEX
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
300
V
300
V
250
V
7
V
20
A
25
A
4
A
106
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.17 ℃/W
isc website：www.iscsemi.cn
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