BUX12 Datasheet, PDF (1/2 Pages) Seme LAB – NPN MULTI - EPITAXIAL POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX12
DESCRIPTION
·Low Collector Saturation Voltage-
·High Switching Speed
·High Current Current Capability
APPLICATIONS
·Power switching circuits
·Motor control
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
V_CEX
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
V_BE= -1.5V
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
VALUE UNIT
300
V
300
V
250
V
7
V
20
A
25
A
4
A
150
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance,Junction to Case 1.17 ℃/W
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