BUX10A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUX10A
DESCRIPTION
·High Switching Speed
·High Current Capability
APPLICATIONS
·Designed for control amplifiers and power switching circuits,
such as converters, inverters, switching regulators, and
switching-control amplifiers.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
VCER
VCEX
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
170
V
160
V
170
V
125
V
7
V
25
A
30
A
5
A
150
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.17 ℃/W
isc website：www.iscsemi.cn
1