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| BUW87A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching regula-
tors and switching control amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCES
Collector-Emitter Voltage VBE=0
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IBB
Base Current-Continuous
2
A
IBM
Base Current-Peak
3
A
IE
Emitter Current-Continuous
11
A
IEM
Emitter Current-Peak
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
15
A
62.5
W
200
â
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.8 â/W
isc Product Specification
BUW87A
isc Websiteï¼www.iscsemi.cn
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