BUW73 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUW73
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 200V(Min.)
·Low Collector Saturation Voltage-
: V_CE(sat)= 1.5V(Max.) @I_C= 12A
APPLICATIONS
·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCES Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
300
V
200
V
7
V
20
A
25
A
4
A
6
A
120
W
175
℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.25 ℃/W
isc website：www.iscsemi.cn
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