BUW70 Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN SILICON POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUW70
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 100V(Min.)
·Low Collector Saturation Voltage-
: V_CE(sat)= 0.8V(Max.) @I_C= 4A
·High Speed Switching
APPLICATIONS
·Designed for use in clocked voltage converters.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
150
V
100
V
7
V
10
A
3
A
80
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.5 ℃/W
isc website：www.iscsemi.cn
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