BUW64A Datasheet, PDF (1/2 Pages) NXP Semiconductors – HIGH-CURRENT, SILICON N-P-N VERSAWATT TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 90V(Min)- BUW64A
= 110V(Min)- BUW64B
= 130V(Min)- BUW64C
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for converters, inverters, pulse-width-modulated
regulators and a variety of power switching circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUW64A
140
V_CEV
Collector-Emitter Voltage
V_BE= -1.5V
BUW64B
160
V
BUW64C
180
BUW64A
90
V_CEO(SUS) Collector-Emitter Voltage BUW64B
110
V
BUW64C
130
V_EBO
I_C
I_CM
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
7
V
7
A
10
A
I_C
Base Current-Continuous
5
A
P_C
Collector Power Dissipation@T_C=25℃
50
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX
2.5
UNIT
℃/W
isc Product Specification
BUW64A/B
isc Website：www.iscsemi.cn