BUW50 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,125V,150W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW50
DESCRIPTION
·With TO-3PN package
·High speed switching
·Low saturation voltage
APPLICATIONS
·Designed for use in general purpose
power amplifier application
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
P_D
Totalpower dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
VALUE
250
125
7
25
50
150
175
-65~175
UNIT
V
V
V
A
A
W
℃
℃
MAX
1.0
UNIT
℃/W