BUW46 Datasheet, PDF (1/2 Pages) Seme LAB – NPN SILICON POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUW46
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 450V(Min.)
·High Speed Switching
APPLICATIONS
·Intended in fast switching applications for high output powers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
900
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
Total Power Dissipation
PT
@ TC≤25℃
TJ
Junction Temperature
10
A
175
W
200
℃
T_stg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.0 ℃/W
isc website：www.iscsemi.cn
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