BUW41B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUW41B
DESCRIPTION
·High Voltage
·High Switching Speed
·Low Collector Saturation Voltage
APPLICATIONS
·Off-line power supplies
·High voltage inverters
·Switching regulators
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CEV
Collector-Emitter Voltage V_BE= -1.5V
650
V
V_CEX
Collector-Emitter Voltage V_BE= -1.5V
450
V
V_CER
Collector-Emitter Voltage R_BE=100Ω
450
V
V_CEO Collector-Emitter Voltage
400
V
V_EBO Emitter-Base Voltage
8
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
10
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
4
A
100
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
1.25 ℃/W
Thermal Resistance,Junction to Ambient 70 ℃/W
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