BUW41A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUW41/A/B
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- BUW41
= 350V(Min)- BUW41A
= 400V(Min)- BUW41B
·High Switching Speed
·High Power Dissipation
APPLICATIONS
·Designed for high voltage and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUW41
450
VCEV
Collector-Emitter Voltage
VBE= -1.5V
BUW41A
550
V
BUW41B
650
BUW41
300
VCEO(SUS) Collector-Emitter Voltage BUW41A
350
V
BUW41B
400
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
PC
Collector Power Dissipation@TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
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