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| BUW40 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUW40/A/B
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- BUW40
= 350V(Min)- BUW40A
= 400V(Min)- BUW40B
·High Switching Speed
·High Power Dissipation
APPLICATIONS
·Designed for high voltage and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
BUW40
450
VCEV
Collector-Emitter Voltage
VBE= -1.5V
BUW40A
550
V
BUW40B
650
BUW40
300
VCEO(SUS) Collector-Emitter Voltage BUW40A
350
V
BUW40B
400
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
2
A
PC
Collector Power Dissipation@TC=25â
40
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-65~150 â
isc Websiteï¼www.iscsemi.cn
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