BUW39 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUW39
DESCRIPTION
·High Current Capability
·Fast Switching Speed
·Low Saturation Voltage and High Gain
APPLICATIONS
Designed for use in high frequency and efficiency converters
such as motor controllers and industrial equipment such as:
·Switching regulators
·Motor control
·High frequency and efficiency converters
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
160
V
80
V
7
V
30
A
40
A
6
A
15
A
150
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.17 ℃/W
isc website：www.iscsemi.cn
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