BUW17 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUW17
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
·High Speed Switching
APPLICATIONS
·Designed for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
PT
Total Power Dissipation
@ TC≤25℃
TJ
Junction Temperature
3
A
100
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.4 ℃/W
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