BUW13W Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon diffused power transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW13W BUW13AW
DESCRIPTION
With TO-247 package
High voltage,high speed
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
BUW13W
Open emitter
BUW13AW
V_CEO
BUW13W
Collector-emitter voltage
Open base
BUW13AW
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
I_BM
Base current-peak
P_T
Total power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-mb}
Thermal resistance from junction to mounting base
VALUE
850
1000
400
450
9
15
30
6
9
175
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
0.7
UNIT
K/W