BUW133 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 450V (Min)-BUW133
500V (Min)-BUW133A
APPLICATIONS
·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
BUW133
850
V_CES
Collector- Emitter
Voltage(V_BE= 0)
V
BUW133A
1000
BUW133
450
V_CEO
Collector-Emitter
Voltage
V
BUW133A
500
V_EBO
I_C
I_CM
I_BB
I_BM
P_C
T_j
T_stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@T_C=25℃
Junction Temperature
Storage Temperature Range
6
V
15
A
20
A
10
A
15
A
135
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 0.93 ℃/W
isc Product Specification
BUW133/A
isc Website：www.iscsemi.cn