BUW131H Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 450V
APPLICATIONS
·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
V_CES
Collector- Emitter Voltage
(V_BE= 0)
850
V_CEO Collector-Emitter Voltage
450
UNIT
V
V
V_EBO Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
16
A
I_BB
Base Current
6
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
12
A
125
W
200
℃
T_stg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 1.0 ℃/W
isc Product Specification
BUW131H
isc Website：www.iscsemi.cn