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| BUW12F Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon diffused power transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUW12F
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@IC= 6A
·High Speed Switching
APPLICATIONS
·Designed for high voltage, fast switching industrial
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
850
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
20
A
IB
Base Current
4
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
6
A
34
W
150
â
Tstg
Storage Temperature Range
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 3.7 â/W
isc websiteï¼www.iscsemi.cn
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