BUW12 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8A,400-450V,125W)

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
With TO-3PN package
High voltage,fast speed
Low collector saturation voltage
APPLICATIONS
Specially intended for operating
In industrial applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Product Specification
BUW12 BUW12A
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
BUW12
BUW12A
V_CEO
BUW12
Collector-emitter voltage
BUW12A
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
VALUE
850
1000
400
450
9
8
20
4
125
150
-65~175
UNIT
V
V
V
A
A
A
W
MAX
1.2
UNIT
/W