BUW11AW Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
4
A
100
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.25 ℃/W
isc Product Specification
BUW11AW
isc website：www.iscsemi.cn
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