BUV70 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV70
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 600V (Min)
·High Power Dissipation
·Fast Switching Speed
APPLICATIONS
·Designed for motor controls, switching mode power
supplies applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CES
Collector-Emitter Voltage
V_CEO Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
I_BB
Base Current-Continuous
I_BM
Base Current-peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
VALUE UNIT
1300
V
600
V
6
V
10
A
15
A
3
A
6
A
140
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 0.89 ℃/W
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