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BUV56 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV56
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min.)
·High Speed Switching
APPLICATIONS
·Designed for switch mode power supply, UPS, DC and AC
motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
Collector-Emitter Voltage
VCEV
VBE= -1.5V
850
VCEO Collector-Emitter Voltage
450
UNIT
V
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
9
A
ICM
Collector Current-Peak
14
A
IB
Base Current-Continuous
3
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
4.5
A
70
W
150
â
Tstg
Storage Temperature Range
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.76 â/W
isc websiteï¼www.iscsemi.cn
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