BUV50 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV50
DESCRIPTION
·High Current Capability
·Low Collector Saturation Voltage-
: V_CE(sat)= 0.8V (Max.) @I_C= 10A
·High Switching Speed
APPLICATIONS
·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CEV
V_CEO
Collector-Emitter Voltage
(V_BE= -1.5V)
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
I_BB
Base Current-Continuous
I_BM
Base Current-peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
VALUE UNIT
250
V
125
V
7
V
25
A
50
A
6
A
12
A
150
W
175
℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.0 ℃/W
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