BUV48T Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Voltage Capability
·High Current Capability
·Fast Switching Speed
APPLICATIONS
Designed for high-voltage,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ulary suited for line-operated swtchmode applications such
as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCES Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
850
V
400
V
7
V
15
A
30
A
5
A
20
A
150
W
175
℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.0 ℃/W
isc Product Specification
BUV48T
isc website：www.iscsemi.cn
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