BUV48B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV48B
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 600V (Min)
·High Current Capability
·Fast Switching Speed
APPLICATIONS
·Designed for switching and industrial applications from
single and three-phase mains.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CER
V_CES
V_CEO
Collector-Emitter Voltage
(R_BE= 10Ω)
Collector-Emitter Voltage
(V_BE= 0)
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak t_p< 5ms
I_BB
Base Current-Continuous
I_BM
Base Current-peak t_p< 5ms
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
VALUE UNIT
1200
V
1200
V
600
V
7
V
15
A
30
A
4
A
20
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.0 ℃/W
isc Website：www.iscsemi.cn