BUV48 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,400-450V,150W)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Voltage Capability
·High Current Capability
·Fast Switching Speed
APPLICATIONS
Designed for high-voltage,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ulary suited for line-operated swtchmode applications such
as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CEX
V_CEO
Collector-Emitter Voltage
(V_BE= -1.5V)
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
I_BB
Base Current-Continuous
I_BM
Base Current-peak
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
VALUE UNIT
850
V
400
V
7
V
15
A
30
A
5
A
20
A
150
W
175
℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.0 ℃/W
isc Product Specification
BUV48
isc Website：www.iscsemi.cn