BUV47FI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV47FI
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
·Collector-Emitter Saturation Voltage-
:VCE(sat)= 1.5V(Max.)@IC= 6A
·High Speed Switching
APPLICATIONS
·Designed for 220V switchmode power supply, DC and AC
motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCER
Collector-Emitter Voltage
RBE= 10Ω
850
VCES
Collector-Emitter Voltage
VBE= 0
850
VCEO
Collector-Emitter Voltage
400
UNIT
V
V
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
9
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
8
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
10
A
50
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.27 ℃/W
isc website：www.iscsemi.com
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