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| BUV47AFI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV47AFI
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min.)
·Collector-Emitter Saturation Voltage-
:VCE(sat)= 1.5V(Max.)@IC= 5A
·High Speed Switching
APPLICATIONS
·Designed for 220V switchmode power supply, DC and AC
motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
VCER
VCES
Collector-Emitter Voltage
RBE= 10Ω
Collector-Emitter Voltage
VBE= 0
1000
1000
VCEO Collector-Emitter Voltage
450
UNIT
V
V
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
9
A
ICM
Collector Current-Peak
15
A
IBB
Base Current-Continuous
8
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
10
A
55
W
150
â
Tstg
Storage Temperature Range
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.27 â/W
isc Websiteï¼www.iscsemi.cn
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