BUV46FI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV46FI
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 400V(Min.)
·High Speed Switching
APPLICATIONS
·Designed for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
Collector-Emitter Voltage V_BE= 0
850
V
V_CEX
Collector-Emitter Voltage
V_BE= -2.5V
850
V
V_CEO
Collector-Emitter Voltage
400
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
5
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
3
A
30
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 4.12 ℃/W
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