BUV46AFI Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV46AFI
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 450V(Min.)
·High Speed Switching
APPLICATIONS
·Designed for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector-Emitter Voltage VBE= 0
1000
V
VCEX
Collector-Emitter Voltage
VBE= -2.5V
1000
V
VCEO Collector-Emitter Voltage
450
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
Collector Power Dissipation
P_C
@TC=25℃
Tj
Junction Temperature
3
A
30
W
150
℃
T_stg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case 4.12 ℃/W
isc website：www.iscsemi.cn
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