BUV42 Datasheet, PDF (1/3 Pages) STMicroelectronics – SILICON NPN SWITCHING TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV42
DESCRIPTION
With TO-3 package
Fast switching times
Low collector saturation voltage
APPLICATIONS
For switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
I_BM
Base current-peak
P_T
Total power dissipation
T_C25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
350
250
7
12
18
2.5
4
120
200
-65~200
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
VALUE
1.46
UNIT
/W