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BUV39 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV39
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.8V (Max.) @IC= 7.5A
·High Switching Speed
APPLICATIONS
·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25â)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
VBE=-1.5V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IBB
Base Current-Continuous
IBM
Base Current- Peak
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
160
V
90
V
7
V
25
A
45
A
6
A
9
A
120
W
200
â
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.46 â/W
isc Websiteï¼www.iscsemi.cn
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