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| BUV37 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,400V,100W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV37
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ IC= 10A
APPLICATIONS
·Designed for use in automotive ignition circuits.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current- Continuous
15
A
ICM
Collector Current-Peak
30
A
IBB
Base Current - Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
4
A
100
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.25 â/W
isc Websiteï¼www.iscsemi.cn
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