BUV28F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 200V(Min)- BUV28F
225V(Min)- BUV28AF
·High Switching Speed
APPLICATIONS
·Designed for fast switching applications such as high
frequency and efficiency converters, switching regulators
and motor control.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUV28F
400
Collector-Emitter Voltage
VCES
VBE= 0
V
BUV28AF 450
BUV28F
200
VCEO Collector-Emitter Voltage
V
BUV28AF 225
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
4
A
18
W
150
℃
T_stg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
7.0 ℃/W
R_{th j-a} Thermal Resistance, Junction to Ambient 55 ℃/W
isc Product Specification
BUV28F/AF
isc website：www.iscsemi.cn
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