BUV28 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,200V,80W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV28
DESCRIPTION
With TO-220C package
Low collector saturation voltage
Fast switching speed
APPLICATIONS
High frequency and efficiency converters
Switching regulators
Motor control
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_tot
Total power dissipation
T_C=25
T_j
Max.operating junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-case} Thermal resistance junction case
VALUE
400
200
7
10
2
70
150
-65~150
UNIT
V
V
V
A
A
W
MAX
1.785
UNIT
/W