BUV26F Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 90V(Min)- BUV26F
100V(Min)- BUV26AF
·High Switching Speed
APPLICATIONS
·Designed for fast switching applications such as high
frequency and efficiency converters, switching regulators
and motor control.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUV26F
180
V_CES
Collector-Emitter Voltage
V_BE= 0
V
BUV26AF
200
BUV26F
90
V_CEO Collector-Emitter Voltage
V
BUV26AF
100
V_EBO Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
14
A
I_CM
Collector Current-Peak
25
A
I_BB
Base Current-Continuous
4
A
I_BM
Base Current-Peak
Collector Power Dissipation
P_C
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
6
A
18
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance, Junction to Case
7.0 ℃/W
R_{th j-a} Thermal Resistance, Junction to Ambient
55
℃/W
isc Product Specification
BUV26F/AF
isc Website：www.iscsemi.cn