BUV26 Datasheet, PDF (1/3 Pages) STMicroelectronics – MEDIUM POWER NPN SILICON TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUV26
DESCRIPTION
With TO-220C package
Low collector saturation voltage
Fast switching speed
APPLICATIONS
For use in high frequency and efficiency
converters,switching regulators and motor
control
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current (peak)
I_B
Base current
I_BM
Base current (peak)
P_tot
Total power dissipation
T_C=25
T_j
Max.operating junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-mb} Thermal resistance junction to mounting base
VALUE
180
90
7
14
25
4
6
85
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
1.92
UNIT
K/W