BUV25 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV25
DESCRIPTION
·Low Collector Saturation Voltage-
: V_CE(sat)= 0.6V (Max.)@I_C= 6A
·High Power Dissipation
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 500V (Min.)
APPLICATIONS
·Designed for use in power switching applications in military
and industrial equipments.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
V_CER
V_CEX
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
R_BE= 100Ω
Collector-Emitter Voltage
V_BE= -1.5V
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
VALUE UNIT
500
V
500
V
500
V
500
V
7
V
15
A
20
A
3
A
250
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance,Junction to Case
0.7
℃/W
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