BUV22 Datasheet, PDF (1/2 Pages) Motorola, Inc – 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV22
DESCRIPTION
·Low Collector Saturation Voltage-
: V_CE(sat)= 1.0V (Max.) @I_C= 10A
·High Switching Speed
·High DC Current Gain-
: h_FE= 20(Min.) @I_C= 10A
APPLICATIONS
·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
V_CER
V_CEX
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
R_BE= 100Ω
Collector-Emitter Voltage
V_BE= -1.5V
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
VALUE UNIT
300
V
290
V
300
V
250
V
7
V
40
A
50
A
8
A
250
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance,Junction to Case
0.7
℃/W
isc Website：www.iscsemi.cn