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BUV20 Datasheet, PDF (1/2 Pages) Motorola, Inc – 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV20
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.) @IC= 25A
·High DC Current Gain-
: hFE= 20(Min.)@ IC= 25A
·High Switching Speed
APPLICATIONS
·Designed for high speed, high current, high power
applications.
Absolute maximum ratings(Ta=25â)
SYMBOL
PARAMETER
VCBO
VCER
VCEX
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
160
V
150
V
160
V
125
V
7
V
50
A
60
A
10
A
250
W
200
â
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.7 â/W
isc websiteï¼www.iscsemi.cn
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