BUV18 Datasheet, PDF (1/2 Pages) Seme LAB – NPN HIGH CURENT SWITCHING TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV18
DESCRIPTION
·Low Collector Saturation Voltage-
: V_CE(sat)= 0.6V(Max.) @I_C= 40A
·High Switching Speed
APPLICATIONS
·High efficiency converters
·Motor drive control
·Switching regulator
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
120
V
60
V
7
V
50
A
90
A
16
A
40
A
250
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 0.7 ℃/W
isc website：www.iscsemi.cn
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