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| BUV11 Datasheet, PDF (1/2 Pages) Motorola, Inc – 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV11
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.6V (Max.) @IC= 6A
·High Switching Speed
·High DC Current Gain-
: hFE= 20(Min.) @IC= 6A
APPLICATIONS
·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25â)
SYMBOL
PARAMETER
VCBO
VCER
VCEX
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
250
V
240
V
250
V
200
V
7
V
20
A
25
A
4
A
150
W
200
â
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.17 â/W
isc Websiteï¼www.iscsemi.cn
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