BUV10 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV10
DESCRIPTION
·High Switching Speed
·High Current Capability
APPLICATIONS
·Designed for high current,high speed,high power applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
V_CEX
V_CER
V_CEO
Collector-Base Voltage
Collector-Emitter Voltage
V_BE= -1.5V
Collector-Emitter Voltage
R_BE= 100Ω
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current-Continuous
I_CM
Collector Current-Peak
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
VALUE UNIT
160
V
160
V
140
V
125
V
7
V
25
A
30
A
6
A
150
W
200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.0 ℃/W
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