BUT92 Datasheet, PDF (1/2 Pages) STMicroelectronics – FAST-SWITCHING POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
n SGS-THOMSON PREFERRED SALESTYPE
n NPN TRANSISTOR hFE > 10 AT IC =35A
n HIGH EFFICIENCY SWITCHING
n VERY LOW SATURATION VOLTAGE
n RECTANGULAR SAFE OPERATING AREA
n WIDE ACCIDENTAL OVERLOAD AREA
APPLICATIONS
n UNINTERRUPTABLE POWER SUPPLY
n SWITCH MODE POWER SUPPLIES
n MOTOR CONTROL
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
(VBE= -1.5V)
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
350
V
250
V
7
V
50
A
75
A
10
A
15
A
250
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W
isc Product Specification
BUT92
isc website：www.iscsemi.com
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