BUT76AF Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUT76AF
DESCRIPTION
·High Voltage
·High Speed Switching
·High Power Dissipation
APPLICATIONS
·Designed for switching mode power supply, inverters,
motor control and relay driver applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CES Collector-Emitter Voltage
1000
V
V_CEO Collector-Emitter Voltage
450
V
V_EBO Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
12
A
I_CM
Collector Current-Peak
20
A
I_BB
Base Current-Continuous
3
A
I_BM
Base Current-peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
6
A
40
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.13 ℃/W
isc Website：www.iscsemi.cn