BUT70W Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH POWER NPN TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Current Capability
·Very Low Saturation Voltage and High Gain
·Fast Switching Speed
APPLICATIONS
·Designed for switching regulation、motor control and
High frequency and efficiency converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
40
A
ICM
Collector Current-Peak
120
A
IB
Base Current- Continuous
8
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
24
A
200
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 0.63 ℃/W
isc Product Specification
BUT70W
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}