BUT54 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUT54
DESCRIPTION
·High Voltage
·High Speed Switching
·High Power Dissipation
APPLICATIONS
·Designed for switching mode power supply and electronic
ballast applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CES
V_CER
V_CEO
Collector-Emitter Voltage
Collector-Emitter Voltage
R_BE≤100Ω
Collector-Emitter Voltage
800
V
800
V
430
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
10
A
I_BM
Base Current-Peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
4
A
100
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance,Junction to Case
1.25 ℃/W
isc Website：www.iscsemi.cn