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| BUT22BF Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)- BUT22BF
450V(Min)- BUT22CF
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
BUT22BF
750
VCES
Collector-Emitter Voltage
VBE= 0
V
BUT22CF
850
BUT22BF
400
VCEO Collector-Emitter Voltage
V
BUT22CF
450
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak tp< 20ms
IBB
Base Current-Continuous
20
A
4
A
IBM
Base Current-Peak tp< 20ms
Collector Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
6
A
23
W
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
5.5 â/W
55 â/W
isc Product Specification
BUT22BF/CF
isc Websiteï¼www.iscsemi.cn
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