BUT21B Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 400V(Min)- BUT21B
450V(Min)- BUT21C
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BUT21B 750
Collector-Emitter Voltage
VCES
VBE= 0
V
BUT21C 850
BUT21B 400
VCEO Collector-Emitter Voltage
V
BUT21C 450
VEBO Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
4
A
100
W
150
℃
T_stg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
1.25 ℃/W
isc Product Specification
BUT21B/C
isc website：www.iscsemi.cn
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